Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy
- 31 January 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 43 (1-3) , 279-282
- https://doi.org/10.1016/s0921-5107(96)01867-3
Abstract
No abstract availableKeywords
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