Quantized Hall Effect in the n‐Inversion Layer in InSb Grain Boundaries
- 1 September 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 125 (1) , K85-K88
- https://doi.org/10.1002/pssb.2221250168
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- On the barrier height in grain boundaries of InSb bicrystalsPhysica Status Solidi (a), 1984
- Fractional Quantization of the Hall EffectPhysical Review Letters, 1983
- Electric subbands in P-type germanium inversion layersSolid State Communications, 1983
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall ResistancePhysical Review Letters, 1980