Effect of Chemical Etches on the Fast Germanium Surface States

Publisher Website
Google Scholar
Abstract
Simultaneous measurements of surface recombination velocity and added trapped charge density in the fast states as a function of surface potential were carried out on one and the same n‐type filament which was subjected to three different etches: CP—4A, concentrated HNO3 and HF. Most measurements were performed at various temperatures. It was found that (a) the reproducibility of surface state parameters after successive treatments with CP—4A was excellent; (b) the influence of the different etches was surprisingly small, with one exception: the average capture probability cp for holes was found to undergo a more than threefold increase after treatment with HF; (c) the energy of the recombination center did not always decrease with increasing temperature, contrary to all previously reported measurements.