A High Gain and Low Supply Voltage LNA for the Direct Conversion Application With 4-KV HBM ESD Protection in 90-nm RF CMOS
- 30 October 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 16 (11) , 612-614
- https://doi.org/10.1109/lmwc.2006.884911
Abstract
A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and plusmn4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protectionKeywords
This publication has 6 references indexed in Scilit:
- A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifierIEEE Microwave and Wireless Components Letters, 2005
- Ultra-low-power 2.4 GHz image-rejection low-noise amplifierElectronics Letters, 2005
- A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOSIEEE Journal of Solid-State Circuits, 2005
- A comparison of CMOS and SiGe LNA's and mixers for wireless LAN applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- MOS noise performance under impedance matchingconstraintsElectronics Letters, 1999
- A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiverIEEE Journal of Solid-State Circuits, 1996