Non-equilibrium carriers in a-Si:H excited by defect absorption
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 563-566
- https://doi.org/10.1016/0022-3093(93)90614-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Comment on ‘‘Excitation-energy dependence of optically induced ESR ina-Si:H’’Physical Review B, 1990
- Excitation-energy dependence of optically induced ESR ina-Si:HPhysical Review B, 1989
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981