Comment on ‘‘Excitation-energy dependence of optically induced ESR ina-Si:H’’
- 15 April 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (11) , 7887-7890
- https://doi.org/10.1103/physrevb.41.7887
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Excitation spectroscopy of thin-film amorphous semiconductors using a free-electron laserJournal of the Optical Society of America B, 1989
- Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPMJapanese Journal of Applied Physics, 1989
- Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energiesPhysical Review B, 1989
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- Origin of the photo-induced changes in hydrogenated amorphous siliconSolar Cells, 1983