Excitation spectroscopy of thin-film amorphous semiconductors using a free-electron laser
- 1 May 1989
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 6 (5) , 1003-1007
- https://doi.org/10.1364/josab.6.001003
Abstract
An infrared free-electron laser has been used to measure the first photoluminescence excitation spectrum well below the optical absorption edge in a thin-film amorphous semiconductor. This method should be useful for probing below-gap absorption mechanisms that contribute to photoluminescence in a wide class of amorphous semiconducting films.Keywords
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