High-purity InP grown on Si by organometallic vapor phase epitaxy
- 8 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (14) , 1554-1556
- https://doi.org/10.1063/1.105245
Abstract
We have grown by organometallic vapor phase epitaxy high‐purity InP on Si substrates using a GaAs intermediate layer. The InP layers exhibit residual electron concentration as low as 5×1014 cm−3 and electron mobilities as high as 4000 and 25 000 cm2/V s at 300 and 77 K, respectively. The achieved InP quality is dependent on the GaAs intermediate layer thickness. These excellent electrical properties are due to high crystal qualities as evidenced by x‐ray rocking curve half width as low as 215 arcsec and defect densities on the order 108 cm−2. p/n junctions, with ideality factors as low as 1.6 and low leakage currents, confirm the device quality of this material.Keywords
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