Recent advances in III–V compounds on silicon
- 31 December 1989
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 19 (1-2) , 21-37
- https://doi.org/10.1016/0146-3535(89)90010-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1988
- High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substratesApplied Physics Letters, 1988
- State of the arts of Ga x In 1-x As y P 1-y -InP laser grown By Low-Pressure Metalorganic Chemical Vapor DepositionPublished by SPIE-Intl Soc Optical Eng ,1987
- Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987
- Silver ion-exchanged, buried, glass optical waveguides with symmetric index profileApplied Physics Letters, 1986
- Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Organometallic Vapor Phase Epitaxial Growth of In1-xGaxP (x ∼0.5) on GaAsJapanese Journal of Applied Physics, 1981
- (Invited) Recent Progress in Semiconductor Laser Research and DevelopmentJapanese Journal of Applied Physics, 1980
- Electron correlation and bound excitons in semiconductorsJournal of Physics C: Solid State Physics, 1977
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972