Thin-film gallium arsenide solar cells on tungsten/graphite substrates
- 1 May 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (9) , 557-559
- https://doi.org/10.1063/1.90128
Abstract
Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS‐type solar cells. The deposited films were oxidized in situ with an argon‐oxygen mixture and, in some cases, followed by a water‐vapor treatment. Gold was used as the barrier metal, and titanium oxide was used as the antireflection coating. Large‐area (6–9 cm2) solar cells with an AM1 efficiency of about 5.5% have been produced.Keywords
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