A photoluminescence study of nitrogen doping of gas-evaporated GaP microcrystals

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Abstract
In an attempt to produce GaP microcrystals doped with N atoms, gas evaporation was performed for a gas mixture composed of Ar and . The microcrystals exhibited photoluminescence bands characteristic of N isoelectronic traps, thereby giving clear evidence of N doping. It was found that the doping level can be controlled by varying the partial pressure of gas. The PN molecules produced near a tungsten heater seem to play an important role in the doping process.