Field-plated high gain lateral bipolar transistor in standard CMOS process for BiNMOS application
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 18.5/1-18.5/4
- https://doi.org/10.1109/cicc.1991.164050
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High gain lateral bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A complementary high current gain transistor for use in a CMOS compatible technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- BiNMOS: a basic cell for BiCMOS sea-of-gatesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1989
- MOS transistors operated in the lateral bipolar mode and their application in CMOS technologyIEEE Journal of Solid-State Circuits, 1983