Temperature dependence of avalanche breakdown in gallium arsenidep—njunctions†
- 1 December 1968
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 25 (6) , 539-546
- https://doi.org/10.1080/00207216808938120
Abstract
The ionization coefficient of carriers in gallium arsenide has been measured over the temperature range − 20°c to +80°c. It has been found to obey the relationship α α∞exp { −(b/ )): } where both α∞and b are functions of temperature. The temperature coefficients of α∞ and b obtained from these measurements have boon used to predict the temperature coefficient of gallium arsenide p-n junctions, and these values have been found to be in good agreement with reported observations.Keywords
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