Hydrogen passivation of Si(100) wafers as templates for low temperature (T < 600°C) epitaxy
- 1 September 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 118 (1-4) , 144-150
- https://doi.org/10.1016/0168-583x(95)01490-x
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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