The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2
- 24 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (21) , 3063-3065
- https://doi.org/10.1063/1.119437
Abstract
The effect of surface nucleation on the evolution of crystalline microstructure during the solid phase crystallization (SPC) of an amorphous Si (a-Si) film, deposited by low pressure chemical vapor deposition (LPCVD) on SiO2, has been investigated. The surface nucleation phenomenon was observed by suppressing the interface (a-Si/SiO2) nucleation by the incorporation of oxygen atoms during the initial deposition period of a-Si. It was found that the surface-nucleated polycrystalline Si (poly-Si) had equiaxial grains with the size of about 3–5 μm, while interface-nucleated one had elliptical grains with the size of about 0.3–1 μm.Keywords
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