Linearity with dose rate of low resistivity p-type silicon semiconductor detectors
- 1 June 1993
- journal article
- Published by IOP Publishing in Physics in Medicine & Biology
- Vol. 38 (6) , 785-792
- https://doi.org/10.1088/0031-9155/38/6/011
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Comparison of entrance and exit dose measurements using ionization chambers and silicon diodesPhysics in Medicine & Biology, 1991
- Correlation between temperature and dose rate dependence of semiconductor response; influence of accumulated doseRadiotherapy and Oncology, 1990
- Characteristics of silicon diodes as patient dosemeters in external radiation therapyRadiotherapy and Oncology, 1988
- Evaluation of temperature effects in p-type silicon detectorsPhysics in Medicine & Biology, 1986
- Radiation Damage Induced Dose Rate Non-Linearity in an N-Type Silicon DetectorActa Radiologica: Oncology, 1984
- Radiation damage and dose rate linearity response of a p-Si detector in 70 MeV protonsNuclear Instruments and Methods in Physics Research, 1983
- Effects of radiation damage on p-type silicon detectorsPhysics in Medicine & Biology, 1983