Electrical characters of oxygen defects in silicon subjected to intrinsic gettering treatment
- 1 July 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (1) , 511-513
- https://doi.org/10.1063/1.350263
Abstract
The influence of oxygen defects on the resistivity and mobility of silicon wafers is discussed. Grinding processes were performed on the surfaces of samples in order to obtain the information on interior defects of the samples. Spreading resistivity and Hall measurements prove that SiOx complexes alone result in resistivity increase and mobility decrease. Deep level transient spectroscopy experiments prove that SiOx complexes alone are electrically active. A mechanism of carrier scattering by electrically active SiOx complex is proposed to explain the changes of resistivity and mobility.This publication has 8 references indexed in Scilit:
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