High-barrier cluster-free AlxGa1−xAs-AlAs-GaAs quantum-well heterostructure laser
- 15 January 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (2) , 63-65
- https://doi.org/10.1063/1.92261
Abstract
Laser data (77 and 300 K) are presented on an AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure (QWH) grown by metalorganic‐chemical vapor deposition with an active region consisting of 13 AlAs barrier layers of size LB∼10 Å and 12 GaAs quantum wells of size Lz∼50 Å. This QWH, which is free of alloy disorder and clustering (Al‐Ga clusters) in the active region, emits on the confined particle transitions and not at the lower energies characteristic of QWH’s with AlxGa1−xAs barrier layers (and Al‐Ga clusters).Keywords
This publication has 2 references indexed in Scilit:
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971