High-pressure studies of photoluminescence in porous silicon
- 1 December 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (21) , 14089-14093
- https://doi.org/10.1103/physrevb.58.14089
Abstract
Raman scattering and photoluminescence measurements performed on porous silicon at high hydrostatic pressures up to 21 GPa indicate that the phase-transition pressure in this material is porosity dependent and much higher than in bulk crystalline silicon. For porosities higher than 80% the phase transition occurs at 18 GPa followed by unrecoverable suppression of both Raman and luminescence activity. The obtained results are consistent with the quantum-confinement model.Keywords
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