Picosecond studies of luminescence in polythiophene and polydiacetylene
- 20 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (26) , L843-L847
- https://doi.org/10.1088/0022-3719/18/26/014
Abstract
Near-band-edge luminescence in polythiophene has a short lifetime of <or approximately=9 ps at 4K owing, it is suggested, to competition by fast nonradiative processes. The decay of luminescence in polydiacetylene (1OH) at 4K is somewhat slower, and much more complex.Keywords
This publication has 16 references indexed in Scilit:
- Photoinduced absorption and luminescence in polydiacetylenesJournal of Physics C: Solid State Physics, 1984
- Optical properties of photoexcited and chemically doped polythiopheneJournal of Physics C: Solid State Physics, 1984
- Photoexcitations in poly (thiophene): Photoinduced infrared absorption and photoinduced electron-spin resonancePhysical Review B, 1984
- Absorption spectra induced by photoexcitation and electrochemical doping in polythiopheneSolid State Communications, 1984
- Charge storage in doped poly(thiophene): Optical and electrochemical studiesPhysical Review B, 1984
- Picosecond studies of luminescence of cis polyacetyleneJournal of Physics C: Solid State Physics, 1983
- One-dimensional recombination of charge carriersJournal of Physics C: Solid State Physics, 1983
- Electrical and optical properties of polythiophene prepared by electrochemical polymerizationSolid State Communications, 1983
- Photoexcitations in polyacetylenePhysical Review B, 1981
- Resonant Raman spectra of deuterated polyacetylene, (CD)xSolid State Communications, 1980