Temperature dependence of the fundamental absorption edge of mercury cadmium telluride

Publisher Website
Google Scholar
Abstract
We have investigated the temperature dependence of the fundamental absorption edge of a series of Hg1−xCdxTe alloys (with composition x ranging from 0.5 to 1). Analyzing our data in the light of the three‐dimensional theory of direct‐allowed excitons, we find precise values for the fundamental Γ8‐Γ6 interband transition energy in a temperature range extending from 0 to 300 K. All experimental results, including previous data for HgTe and mercury‐rich Hg1−xCdxTe alloys, are well accounted for using a simple empirical formula: Eg (eV)=−0.303(1−x)+1.606x−0.132x(1−x)+[6.3(1−x) −3.25x −5.92x(1−x)]10−4T2/[11(1−x)+78.7x+T]. This expression, which is valid for all compositions 0≤x≤1 and temperatures 0≤T≤500 K, predicts an alloy composition such that the band‐gap energy is temperature independent: We find x=0.505. Finally, it can be used for technological application purpose (far‐infrared detection as well as optical‐fiber communications performed at realistic values of the temperature) and gives accurate values for the temperature and composition dependence of the effective mass in the semiconducting range of alloys.