Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser
- 2 February 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (3) , 243-244
- https://doi.org/10.1049/el:19890172
Abstract
Record low-threshold current density operation of a singlestrained-quantum-well graded-index separate-confinement heterostructure GaInAs/AlGaAs laser has been obtained. The device was grown by molecular-beam epitaxy on a GaAs substrate and uses a proton implant stripe geometry to achieve a threshold current density of 1.3 kA/cm2.Keywords
This publication has 1 reference indexed in Scilit:
- Ion Implantation Processing of III-V Strained-Layer SemiconductorsMRS Proceedings, 1988