Ion Implantation Processing of III-V Strained-Layer Semiconductors
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- The determination of impact ionization coefficients in ln0.2Ga0.8As/GaAs strained-layer superlattice mesa photodiodesJournal of Electronic Materials, 1986
- Proton isolated In0.2Ga0.8As/GaAs strained-layer superlattice avalanche photodiodeApplied Physics Letters, 1986
- Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectorsApplied Physics Letters, 1985
- Ion-implantation doping of strained-layer superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Ion implantation into strained-layer superlatticesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Structural integrity of ion-implanted In0.2Ga0.8As/GaAs strained-layer superlatticeApplied Physics Letters, 1984
- An ion-implanted Ga(AsP)/GaP strained-layer superlattice photodetectorIEEE Electron Device Letters, 1984
- Be-implantation doping of GaAsxP1−x/GaP strained-layer superlatticesApplied Physics Letters, 1984
- Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect TransistorIEEE Journal of Solid-State Circuits, 1980
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949