Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4) , 424-432
- https://doi.org/10.1109/jssc.1980.1051416
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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