Extremely low capacitance silicon film MOS transistors
- 1 March 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (3) , 379-381
- https://doi.org/10.1109/t-ed.1966.15696
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Grown-film silicon transistors on sapphireProceedings of the IEEE, 1964
- The silicon insulated-gate field-effect transistorProceedings of the IEEE, 1963