Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
- 15 January 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (2) , 1005-1007
- https://doi.org/10.1063/1.364194
Abstract
The dynamics of photoluminescence lines of a Si-doped InGaN/GaN/AlGaN quantum well (QW) grown by metalorganic chemical vapor deposition have been studied by time-resolved photoluminescence emission spectroscopy. A dominant broad emission band from the InGaN QW has been observed, and attributed to radiative recombination of electrons in the InGaN well with the photoexcited holes. The transient behavior of the observed emissions have been measured at different temperatures and found to be dependent on both emission and excitation probe energy.This publication has 7 references indexed in Scilit:
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