j-B characteristics of S-type in the presence of multivalued electron distribution between the equivalent valleys in Si

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Abstract
In n-Si dependence of the current density j and the transverse electric field Eperpendicular to on the applied electric field strength Ex is investigated theoretically and experimentally in the presence of a magnetic induction B perpendicular to the current, which can lead to a multivalued electron distribution between the valleys (MED) because the total field E (not only Ex) heats the carriers (this is related to the fact that partial transverse currents of electrons in different valleys exist regardless of the absence of the transverse current). For a homogeneous distribution of j and E numerical calculations deliver S-type j-B characteristics in the region of MED, which in turn, on account of the instability of a state with negative dj/DB, leads to an inhomogeneous current distribution. A layer of high current density, in which the electrons are repopulated into the valleys with high mobility along Ex, is built up near one side of the sample. With increasing B the wall parallel to the current between the layers with high and low current density quickly moves to the opposite surface. This is accompanied by a jump-like change of the transverse field and a strong increase of the current.

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