Fabrication of diamond single-hole transistors using AFM anodization process
- 30 June 2002
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 11 (3-6) , 387-391
- https://doi.org/10.1016/s0925-9635(01)00655-0
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Oxygen-induced surface state on diamond (100)Diamond and Related Materials, 2001
- Nanofabrication on Hydrogen-Terminated Diamond Surfaces by Atomic Force Microscope Probe-Induced OxidationJapanese Journal of Applied Physics, 2000
- Engineering low resistance contacts on p-type hydrogenated diamond surfacesDiamond and Related Materials, 2000
- Device modeling of high performance diamond MESFETs using p-type surface semiconductive layersDiamond and Related Materials, 1997
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti systemApplied Physics Letters, 1996
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM DiodeJapanese Journal of Applied Physics, 1995
- Electric Properties of Metal/Diamond Interfaces Utilizing Hydrogen-Terminated Surfaces of Homoepitaxial DiamondsJapanese Journal of Applied Physics, 1994
- Hydrogenating Effect of Single-Crystal Diamond SurfaceJapanese Journal of Applied Physics, 1992
- Single electron charging effects in semiconductor quantum dotsZeitschrift für Physik B Condensed Matter, 1991