Nanofabrication on Hydrogen-Terminated Diamond Surfaces by Atomic Force Microscope Probe-Induced Oxidation
- 1 July 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (7S) , 4631
- https://doi.org/10.1143/jjap.39.4631
Abstract
Field-assisted local oxidation on a hydrogen-terminated (001) diamond surface was performed using an atomic force microscope (AFM). Anodic oxidation by a surface water meniscus layer is suggested to account for this oxidation process. Through the oxygenated area, Fowler-Nordheim (F-N) tunneling current was observed. The difference in electron affinity between the hydrogen-terminated surface and the oxygenated area was confirmed by scanning electron microscopic (SEM) observations.Keywords
This publication has 15 references indexed in Scilit:
- High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 µm Gate LengthJapanese Journal of Applied Physics, 1999
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation ProcessJapanese Journal of Applied Physics, 1999
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe OxidationJapanese Journal of Applied Physics, 1999
- Application of scanning tunneling microscopy nanofabrication process to single electron transistorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Mechanisms of surface anodization produced by scanning probe microscopesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Fabrication of Si nanostructures with an atomic force microscopeApplied Physics Letters, 1994
- Modification of Silicon Surface Using Atomic Force Microscope with Conducting ProbeJapanese Journal of Applied Physics, 1993
- Hydrogenating Effect of Single-Crystal Diamond SurfaceJapanese Journal of Applied Physics, 1992
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979