High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 µm Gate Length
- 1 November 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (11A) , L1222
- https://doi.org/10.1143/jjap.38.l1222
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF2 Insulator FilmJapanese Journal of Applied Physics, 1998
- Diamond surface-channel FET structure with 200 V breakdown voltageIEEE Electron Device Letters, 1997
- Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin filmsApplied Physics Letters, 1997
- Enhancement/depletion MESFETs of diamond and their logic circuitsDiamond and Related Materials, 1997
- Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurementsApplied Physics Letters, 1996
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Pulse-doped diamond p-channel metal semiconductor field-effect transistorIEEE Electron Device Letters, 1995
- Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamondsApplied Physics Letters, 1994
- Hydrogenating Effect of Single-Crystal Diamond SurfaceJapanese Journal of Applied Physics, 1992
- Diamond MESFET using ultrashallow RTP boron dopingIEEE Electron Device Letters, 1991