Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF2 Insulator Film
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12A) , L1444
- https://doi.org/10.1143/jjap.37.l1444
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistorsJournal of Applied Physics, 1997
- Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor StructureJapanese Journal of Applied Physics, 1996
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Fermi Level Pinning in Metal-Insulator-Diamond StructuresJapanese Journal of Applied Physics, 1995
- Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamondsApplied Physics Letters, 1994
- Diamond Field-Effect TransistorsMRS Proceedings, 1994
- Hydrogenating Effect of Single-Crystal Diamond SurfaceJapanese Journal of Applied Physics, 1992
- High-temperature thin-film diamond field-effect transistor fabricated using a selective growth methodIEEE Electron Device Letters, 1991
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962