Metal/insulator/semiconductor tunnel diodes formed by the oxidation of polycrystalline diamond films
- 15 September 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (6) , 3929-3931
- https://doi.org/10.1063/1.357407
Abstract
Polycrystallinediamondfilms have been annealed under O2 at 600 °C, or have been dipped in a H2SO4/CrO3 solution. Both treatments result in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulator/diamond tunnel diode with a potential barrier for holes of 0.85 eV, and with a Fermi level localized at about 0.45 eV above the diamond valence band.This publication has 4 references indexed in Scilit:
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