Carrier Lifetime Reduction by Ion Implantation into Silicon

This publication has 14 references indexed in Scilit:

• Crystalline-to-amorphous phase transformation by ion bombardment of the alloy Fe75B25
  Materials Science and Engineering, 1982
• Ion Implantation for Very Large Scale Integration
  Published by Elsevier ,1982
• Deep centers introduced by argon ion bombardment in n-type silicon
  Solid-State Electronics, 1981
• Energy Levels in Silicon
  Annual Review of Materials Science, 1980
• Minority carrier lifetime in silicon after Ar+ and Si+ implantation
  Physica Status Solidi (a), 1979
• Lifetime Evaluation of Ion Implanted Layers by Pulsed MOS Capacitance
  Japanese Journal of Applied Physics, 1975
• Shallow donor formation in Si produced by proton bombardment
  Physica Status Solidi (a), 1973
• Bulk and optical generation parameters measured with the pulsed MOS capacitor
  IEEE Transactions on Electron Devices, 1972
• The silicon-silicon dioxide system
  Proceedings of the IEEE, 1969
• Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure
  Journal of the Electrochemical Society, 1965