Vapour phase epitaxy of InP: Growth kinetics and controlled doping
- 1 August 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (2) , 267-273
- https://doi.org/10.1016/0022-0248(79)90251-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Pure and doped indium phosphide by vapour phase epitaxyJournal of Crystal Growth, 1978
- High purity LPE InPJournal of Electronic Materials, 1978
- Molecular Beam Epitaxial Growth of InPJournal of the Electrochemical Society, 1977
- InP Gunn-Effect Devices for Millimeter-Wave Amplifiers and OscillatorsIEEE Transactions on Microwave Theory and Techniques, 1976
- Solubilities of InP and CdS in Cd, Sn, In, Bi, and PbJournal of Crystal Growth, 1976
- A comparative thermodynamic analysis of InP and GaAs depositionJournal of Physics and Chemistry of Solids, 1975
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974
- Calculation of the In/Ga/P ternary phase diagram and its relation to liquid phase epitaxyJournal of Materials Science, 1970
- Phase equilibria and vapor pressures of the system In+PThe Journal of Chemical Thermodynamics, 1970
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963