Pure and doped indium phosphide by vapour phase epitaxy
- 1 May 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 43 (4) , 473-479
- https://doi.org/10.1016/0022-0248(78)90346-9
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Multilayered structures of epitaxial indium phosphideJournal of Crystal Growth, 1975
- Growth of Epitaxial GaAs Structures for High Efficiency IMPATT'sJournal of the Electrochemical Society, 1975
- Measurement of carrier-concentration profiles in epitaxial indium phosphideElectronics Letters, 1973
- The photoluminescence spectra of excitons bound to group II acceptors in indium phosphideSolid State Communications, 1972
- Si Contamination in Open Flow Quartz Systems for the Growth of GaAs and GaPJournal of the Electrochemical Society, 1972
- Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAsJournal of the Electrochemical Society, 1971
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963