Behavior of Si Photoelectrodes under High Level Injection Conditions. 3. Transient and Steady-State Measurements of the Quasi-Fermi Levels at Si/CH3OH Contacts
- 1 April 1997
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 101 (15) , 2850-2860
- https://doi.org/10.1021/jp962485c
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Behavior of Si Photoelectrodes under High Level Injection Conditions. 2. Experimental Measurements and Digital Simulations of the Behavior of Quasi-Fermi Levels under Illumination and Applied BiasThe Journal of Physical Chemistry B, 1997
- Behavior of Si Photoelectrodes under High Level Injection Conditions. 1. Steady-State Current−Voltage Properties and Quasi-Fermi Level Positions under IlluminationThe Journal of Physical Chemistry B, 1997
- Measurement of Barrier Heights of Semiconductor/Liquid Junctions Using a Transconductance Method: Evidence for Inversion at n-Si/CH3OH-1,1'-Dimethylferrocene+/0 JunctionsThe Journal of Physical Chemistry, 1994
- Comparability of redox reactions at n- and p-type semiconductor electrodes. 2. Electrochemical overpotential and recombination in view of the quasi-Fermi level conceptThe Journal of Physical Chemistry, 1992
- Real-time measurements of interfacial charge transfer rates at silicon/liquid junctionsJournal of the American Chemical Society, 1990
- Laser Induced Electrical Transients at Semiconductor ElectrodesBerichte der Bunsengesellschaft für physikalische Chemie, 1988
- Point-contact solar cells: Modeling and experimentSolar Cells, 1986
- Fast Photocurrent Transients in Photoelectrochemical Cells with Semiconductor and Insulator ElectrodesBerichte der Bunsengesellschaft für physikalische Chemie, 1984
- Resistivity‐Dopant Density Relationship for Boron‐Doped SiliconJournal of the Electrochemical Society, 1980
- Resistivity‐Dopant Density Relationship for Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1980