EBIC study on the electrical activity of stacking faults in silicon

This publication has 9 references indexed in Scilit:

• Quantitative electron-beam tester for defects in semiconductors (CL/EBIC/SDLTS system)
  Review of Scientific Instruments, 1995
• Electrical activity of extended defects and gettering of metallic impurities in silicon
  Materials Science and Technology, 1995
• Gettering of copper by bulk stacking faults and punched-out dislocations in Czochralski-grown silicon
  Journal of Applied Physics, 1994
• Recombination at clean and decorated misfit dislocations
  Applied Physics Letters, 1992
• Deep levels associated with oxidation induced stacking faults in n-type silicon
  Applied Physics Letters, 1992
• Gettering of Copper to Oxidation Induced Stacking Faults in Silicon
  Physica Status Solidi (a), 1990
• The electrical activity of stacking faults in Czochralski silicon
  Applied Physics A, 1989
• Energy Levels of Intrinsic and Extrinsic Stacking Faults in Silicon
  Physica Status Solidi (b), 1981
• The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski silicon
  Applied Physics Letters, 1977