The effect of oxygen adsorption on the electronic properties of the polar GaAs(111) surface after thermal cleaning in ultrahigh vacuum
- 15 March 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 170 (2) , 219-226
- https://doi.org/10.1016/0040-6090(89)90727-x
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Adsorption of oxygen on clean gaas surfaces investigated by ultraviolet photoemissionJournal of Electron Spectroscopy and Related Phenomena, 1987
- Structure and reactivity of GaAs surfacesProgress in Surface Science, 1981
- Semiconductor surface state spectroscopySurface Science, 1979
- Adsorption states and Ga depletion during oxygen adsorption on clean polar GaAs surfacesSurface Science, 1979
- High-resolution photoemission yield and surface states in semiconductorsIl Nuovo Cimento B (1971-1996), 1977
- Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(111)As surfacesSurface Science, 1977
- Oxidation and annealing of GaP and GaAs (111)-faces studied by AES and UPSJournal of Electron Spectroscopy and Related Phenomena, 1976
- Electronic surface states on clean and oxygen‐exposed GaAs surfacesJournal of Vacuum Science and Technology, 1976
- Surface studies on clean and oxygen-exposed GaAs and Ge surfaces by low-energy electron loss spectroscopyC R C Critical Reviews in Solid State Sciences, 1975
- Electron stimulated oxidation of GaAs, studied by quantitative auger electron spectroscopySurface Science, 1975