Oxidation and annealing of GaP and GaAs (111)-faces studied by AES and UPS
- 31 December 1976
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 8 (3) , 225-238
- https://doi.org/10.1016/0368-2048(76)81007-9
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Photoemission and energy loss spectroscopy on semiconductor surfacesSurface Science, 1975
- Electron stimulated oxidation of GaAs, studied by quantitative auger electron spectroscopySurface Science, 1975
- Intrinsic (111) surface states of Ge, GaAs, and ZnSePhysical Review B, 1975
- Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfacesPhysical Review B, 1974
- AES studies of arsenic vacancies in (
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- Characteristic energy loss and Auger electron spectra of GaP (110)Surface Science, 1973
- L-S coupling interpretation of high-resolution LMM Auger spectra of Cu and ZnJournal of Applied Physics, 1972
- X-Ray Photoelectron Spectroscopic Studies of Valence States Produced by Ion-Sputtering ReductionApplied Spectroscopy, 1972
- Studies of the Vaporization Mechanism of Gallium Arsenide Single CrystalsThe Journal of Chemical Physics, 1971