Enhancement-mode GaAs MESFET technology for low consumption power and low noise applications

17 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1443-1446 vol.3
https://doi.org/10.1109/mwsym.1994.335140

Abstract

Ion implanted enhancement-mode GaAs MESFETs with an advanced LDD structure have been developed. A manufacturable self-aligned process based on a dummy gate was used for the fabrication of 0.3 /spl mu/m gate device. At 1 mW operation, a noise figure (NF) of lower than 1.0 dB with an associated gain of higher than 9.0 dB was measured at 6 GHz. Furthermore, a standard deviation of NF as small as 0.05 dB at an average of 0.83 dB was obtained over a 3"/spl Phi/ wafer.<>

Keywords

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