A self-aligned source/drain planar device for ultrahigh-speed GaAs MESFET VLSIs

1 January 1981

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XXIV, 218-219
https://doi.org/10.1109/isscc.1981.1156230

Abstract

A self-aligned source/drain planar GaAs MESFET fabrication technique using high temperature stable Ti-W mixed metal gates as implantation masks will be reported. Propagation delays of 50ps have been attained from fully implanted1.5/mum-gate normally-off GaAs MESFET logic.

Keywords

This publication has 4 references indexed in Scilit:

GaAs gigabit logic circuits using normally-off m.e.s.f.e.t.s
Electronics Letters, 1980
High temperature stable metal-GaAs contacts
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1979
Planar GaAs IC technology: Applications for digital LSI
IEEE Journal of Solid-State Circuits, 1978
Normally-off type GaAs MESFET for low power, high speed logic circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1977