Amorpiious Silicon Thin Film Transistor and its Applications to Large-Area Electironics
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Direct Observation of the Movement of Vertical Bloch Lines in Ho–Co Sputter-Deposited FilmsJapanese Journal of Applied Physics, 1983
- The characteristics and properties of optimised amorphous silicon field effect transistorsApplied Physics A, 1983
- Electrical Properties of Polycrystalline Silicon MOSFETs on GlassJapanese Journal of Applied Physics, 1983
- Amorphous-silicon/silicon-oxynitride field-effect transistorsApplied Physics Letters, 1982
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser AnnealingJapanese Journal of Applied Physics, 1982
- Laser crystallization of Si films on glassApplied Physics Letters, 1982
- Amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1981
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- Polycrystalline-silicon thin-film transistors on glassApplied Physics Letters, 1980
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979