Reverse current mechanisms in amorphous silicon diodes
- 28 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (9) , 1129-1131
- https://doi.org/10.1063/1.110828
Abstract
We analyze the dark steady-state reverse current of a-Si:H nip diodes at high voltages. The reverse current shows a strong voltage dependence and has a temperature dependence characterized by a voltage-dependent activation energy. A model, based on the simultaneous field enhanced generation of electrons and holes, is developed to describe this voltage and temperature dependence. In this model the effective mass of electrons and holes is a model parameter. Good fits with experimental results are obtained for an effective mass value of 0.05me. The low effective mass value is tentatively explained as a parameter that accounts for a field dependent narrowing of the band gap due to the presence of localized band tail states.Keywords
This publication has 13 references indexed in Scilit:
- Tunneling effective mass in hydrogenated amorphous siliconApplied Physics Letters, 1993
- 2D Image Sensing Arrays with NIP DiodesMRS Proceedings, 1993
- Amorphous Silicon Image Sensor ArraysMRS Proceedings, 1992
- Current-induced defect creation and recovery in hydrogenated amorphous siliconApplied Physics Letters, 1991
- Long-time transient conduction in a-Si:H p─i─n devicesPhilosophical Magazine Part B, 1991
- Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunnelingPhysical Review B, 1986
- Existence of a Gap in the Electronic Density of States of a Disordered SystemPhysical Review B, 1971
- Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of TrapsPhysical Review B, 1971
- Poole-Frenkel conduction in amorphous solidsPhilosophical Magazine, 1971
- Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal SystemsPhysical Review B, 1967