Anodic sulfide films on Hg1−xCdxTe

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Abstract
A novel anodic sulfidization process for forming native sulfide films on Hg1−xCdxTe is described. In the new process native sulfide films rather than native oxides terminate the lattice and passivate the surface. The results of Auger electron spectroscopy analysis indicate that native homogeneous CdS films are formed with an abrupt interfacial transition. The measured capacitance‐voltage characteristics of metal‐insulator‐semiconductor devices indicate that the films have a low negative fixed surface charge density of the order of –1×1011 e cm−2 and a relatively low concentration of fast surface charge density. The native sulfide films leave the surface of p‐type Hg1−xCdxTe practically at flat band and in this respect are superior to native oxide films which invert the surface of p‐type material. The new surface passivation is in particular suitable for photovoltaic diodes implemented on p‐type Hg1−xCdxTe.

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