Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3B) , L419
- https://doi.org/10.1143/jjap.30.l419
Abstract
The oxidation process of hydrogen terminated silicon surface is investigated by thermal desorption spectroscopy (TDS). Oxidation proceeds by two steps, at about 500°C and 800°C, by the desorption of hydrogen and the consumption of oxygen and water. Oxygen and water are consumed simultaneously, but water consumption does not change with oxygen supply. The oxidation process changes by the presence of the native oxide.Keywords
This publication has 11 references indexed in Scilit:
- Growth of native oxide on a silicon surfaceJournal of Applied Physics, 1990
- Integrated thermal chemical vapor deposition processing for Si technologyJournal of Vacuum Science & Technology A, 1990
- Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy WaterJapanese Journal of Applied Physics, 1990
- The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etchingJournal of Applied Physics, 1988
- Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density; A comparison with O2Surface Science, 1987
- Initial stage of thermal oxidation of the Si(111)-(7×7) surfacePhysical Review B, 1986
- Adsorption states and adsorption kinetics of atomic hydrogen on silicon crystal surfacesSurface Science, 1985
- Monohydride and dihydride formation at Si(100) 2x1: A high resolution electron energy loss spectroscopy studySolid State Communications, 1983
- Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfacesApplied Physics A, 1982
- Determination of transmission characteristics in mass filtersJournal of Physics E: Scientific Instruments, 1970