Antimony on p-lnP: characterization of band bending and overlayer growth by Raman spectroscopy
- 1 January 1988
- Vol. 38 (4-5) , 229-232
- https://doi.org/10.1016/0042-207x(88)90050-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Symmetry forbidden LO-phonon Raman scattering in heavily doped 〈1 0 0〉 n-GaAsSolid State Communications, 1987
- The InP(110)/Sb interface: Ohmic behavior at large Sb coveragesJournal of Vacuum Science & Technology B, 1987
- Electrical study of Schottky-barrier heights on atomically cleanp-type InP(110) surfacesPhysical Review B, 1987
- Sb overlayers on GaAs(110)Surface Science, 1986
- A study of the cleaved InP surface by CPD and SPV topographiesSurface Science, 1985
- Formation of metal–semiconductor interfaces: From the submonolayer regime to the real Schottky barrierJournal of Vacuum Science & Technology B, 1985
- Raman scattering properties of amorphous As and SbPhysical Review B, 1977
- Resonance Raman scattering in InAs near the E1 gapSolid State Communications, 1973
- Raman Scattering from InSb Surfaces at Photon Energies Near theEnergy GapPhysical Review Letters, 1968
- Optical Properties and Band Structure of Group IV-VI and Group V MaterialsPhysical Review B, 1964