High transmission gain integrated antenna on extremely high resistivity Si for ULSI wireless interconnect
- 1 December 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (12) , 731-733
- https://doi.org/10.1109/led.2002.805754
Abstract
We have demonstrated the highest transmission gain integrated dipole antenna on Si reported so far, to use as an integrated antenna for the purpose of ULSI on-chip wireless interconnection. A 2-mm long and 10-μm wide dipole antenna pair at a distance of 1 cm shows a transmission gain of -36.5 dB at 18 GHz, which is 20 dB higher than the previously reported gain. This large increase in gain is achieved by proton implantation on the Si substrate, which increased the resistivity from 10 /spl Omega/-cm to 0.1 M/spl Omega/-cm. It is also found that transmission gain can be maximized for a given resistivity by optimizing the Si substrate thickness or by inserting a low-k dielectric layer below the substrate.Keywords
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