Enhanced diffusion in ion implanted silicon
- 1 January 1970
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 6 (1) , 115-120
- https://doi.org/10.1080/00337577008235053
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- RADIATION-ENHANCED DIFFUSION OF BORON IN SILICONApplied Physics Letters, 1969
- DOPING OF SILICON BY ION IMPLANTATIONApplied Physics Letters, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Influence of temperature on phosphorus ion behavior during silicon bombardmentCanadian Journal of Physics, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- Ion Bombardment of Silicon in a Glow DischargeJournal of Applied Physics, 1963
- Non-metallic solids. Vacancy enhanced diffusion in silicon. Effects of irradiation and of chemical impuritiesDiscussions of the Faraday Society, 1961
- Radiation Enhanced Diffusion in SolidsJournal of Applied Physics, 1958