GaAsInSb graded-gap heterojunction
- 31 July 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (7) , 671-687
- https://doi.org/10.1016/0038-1101(67)90097-4
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Phonon Spectroscopy of Germanium-Silicon Tunnel HeterojunctionsPhysical Review B, 1966
- Alloyed Semiconductor HeterojunctionsPhysica Status Solidi (b), 1966
- The conduction properties of GeGaAs1−xPxn−n heterojunctionsSolid-State Electronics, 1965
- GaAs-InSb n-n HETEROJUNCTION: A SINGLE-CRYSTAL ``SCHOTTKY'' BARRIERApplied Physics Letters, 1965
- INVERSION OF {111} SURFACES IN SINGLE-CRYSTAL REGROWTH DURING INTERFACE-ALLOYING OF INTERMETALLIC COMPOUNDSApplied Physics Letters, 1964
- Interface-alloy epitaxial heterojunctionsSolid-State Electronics, 1964
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- The Position of the Fermi Level at a Hetero‐Junction InterfacePhysica Status Solidi (b), 1964
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962