Luminescence Properties of GaAs Epitaxial Layers Grown By Liquid Phase Epitaxy and Molecular Beam Epitaxy
- 1 January 1980
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Structure and composition of interfaces between Ga1−xAlxAs and GaAs layers grown by liquid phase epitaxy (LPE)Journal of Vacuum Science and Technology, 1980
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- Climb asymmetry in degraded gallium arsenide lasersPhilosophical Magazine A, 1980
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978
- The origin of dislocation climb during laser operationApplied Physics Letters, 1977
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Monte Carlo simulation of the kinetics of heterogeneous nucleationJournal of Applied Physics, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973